| 摘要 |
<p>A method of fabricating a thin film transistor is provided. The thin film transistor fabrication method includes the steps of: forming an amorphous silicon film on an insulation substrate; continuously forming a gate oxide film and a gate electrode metal film on the silicon film of the substrate; sequentially patterning the gate electrode metal film and the gate oxide film to thereby form a gate electrode and a gate insulation film; and patterning the amorphous silicon film to thereby form a semiconductor layer which is used as an active region. When a silicon thin film transistor is fabricated according to the above-described steps, foreign matters which are fatal to performance of the thin film transistor can be contained at minimum in an interface between the silicon and the gate oxide film.</p> |
