| 摘要 |
<p>Disclosed are a phase-change random access memory device and a method for manufacturing the same by performing a photolithography process using electronic beam. The phase-change random access memory device includes a first insulation layer having first contact holes and a second contact hole, conductive plugs for filling the first contact holes, a bit line for filling the second contact hole, and a second insulation layer. A third insulation layer is formed on the second insulation layer. Third contact holes are formed in the third and second insulation layers. Fourth contact holes are formed between the hard mask layer and the third insulation layer. First and second bottom electrode contacts are provided to fill the third and fourth contact holes. Bottom electrodes are formed on the third insulation layer.</p> |
