| 摘要 |
<p>Disclosed are a phase-change random access memory device and a method for manufacturing the same. The phase-change random access memory includes a first insulation layer having first contact holes, conductive plugs for filling the first contact holes, a second insulation layer having a second contact hole, and a bit line. Third and fourth insulation layers and a nitride layer are sequentially formed on the second insulation layer and have third contact holes. Bottom electrodes are provided to fill the third contact holes. An opening is formed in order to expose a part of the third insulation layer and a cavity is connected with the opening so as to expose a part of the bottom electrode. A phase-change layer pattern is connected to one side of the bottom electrode. A top electrode is formed on the phase-change layer pattern.</p> |
