| 摘要 |
<p>Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: bottom electrodes and top electrodes formed on a dielectric interlayer, each of the bottom electrodes and the top electrodes having both side surfaces in contact with a first oxide layer, a phase-change layer, a nitride layer, and a second oxide layer; the phase-change layer formed between the first oxide layer and the nitride layer while being in contact with the side surfaces of the bottom electrodes and the top electrodes; a third oxide layer formed on the bottom electrodes and the top electrode; and a metal wire in contact with the top electrode.</p> |
