GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE COMPRISING INDIUM INCORPORATED N-TYPE GALLIUM NITRIDE SEMICONDUCTOR LAYER,申请号KR20040049331-传众专利搜索

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发明名称	GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE COMPRISING INDIUM INCORPORATED N-TYPE GALLIUM NITRIDE SEMICONDUCTOR LAYER
摘要
申请公布号	KR20060000466(A)	申请公布日期	2006.01.06
申请号	KR20040049331	申请日期	2004.06.29
申请人	SAMSUNG ELECTRO-MECHANICS CO., LTD.	发明人	SHIM, HYUN WOOK;SUH, EUN KYUNG;KIM, YOON KYEOM;WON, JONG HAK;PARK, JIN SUB;KANG, JOONG SEO;LEE, HYUN JIN
分类号	H01L33/14	主分类号	H01L33/14
代理机构		代理人
主权项
地址

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