| 摘要 |
PROBLEM TO BE SOLVED: To enhance a performance or reliability of a semiconductor device which comprises MIS (Metal Insulator Semiconductor) field-effect transistors. SOLUTION: In the semiconductor device having CMISFETs, a gate electrode 31a of an n-channel MISFET 30a is composed of a nickel silicide film formed by reacting a silicon film obtained by doping P, As or Sb to an Ni film, and a gate electrode 31b of a p-channel MISFET 30b is composed of a nickel silicon germanium film formed by reacting a non-doped silicon germanium film to the Ni film. The work function of the gate electrode 31a is controlled by doping P, As or Sb, and the work function of the gate electrode 31b is controlled by adjusting a Ge concentration. COPYRIGHT: (C)2006,JPO&NCIPI
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