| 摘要 |
Drain-extended MOS transistors (T 1 , T 2 ) and semiconductor devices ( 102 ) are described, as well as fabrication methods ( 202 ) therefor, in which a p-buried layer ( 130 ) is formed prior to formation of epitaxial silicon ( 106 ) over a substrate ( 104 ), and a drain-extended MOS transistor (T 1 , T 2 ) is formed in the epitaxial silicon layer ( 106 ). The p-buried layer ( 130 ) may be formed above an n-buried layer ( 120 ) in the substrate ( 104 ) for high-side driver transistor (T 2 ) applications, wherein the p-buried layer ( 130 ) extends between the drain-extended MOS transistor (T 2 ) and the n-buried layer ( 120 ) to inhibit off-state breakdown between the source ( 154 ) and drain ( 156 ).
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