发明名称 Schottky device and method of forming
摘要 A conductive layer includes a first portion that forms a Schottky region with an underlying first region having a first conductivity type. A second region of a second conductivity type underlies the first region, where the second conductivity type is opposite the first conductivity type. A third region of the first conductivity type immediately underlies the second region and is electrically coupled to a cathode of the device.
申请公布号 US2006001057(A1) 申请公布日期 2006.01.05
申请号 US20040881678 申请日期 2004.06.30
申请人 KHEMKA VISHNU K;PARTHASARATHY VIJAY;ZHU RONGHUA;BOSE AMITAVA 发明人 KHEMKA VISHNU K.;PARTHASARATHY VIJAY;ZHU RONGHUA;BOSE AMITAVA
分类号 H01L29/80;H01L21/338 主分类号 H01L29/80
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