SEMICONDUCTOR DEVICE WITH CAPACITOR ELEMENT MOUNTED THEREON

摘要

In a capacitor element having a metal oxide high dielectric constant film between wiring layers as a capacitor insulating film, diffusion and thermal oxidation of a lower layer wiring material are suppressed, and a surface whereupon the thin capacitor insulating film which constitutes the capacitor element is to be formed is planarized. In a prescribed area of a wiring cap film (103), which serves to prevent diffusion and oxidation of the wiring material formed on the wiring formed on the lower layer of the capacitor element, a lower electrode (111b) which can prevent diffusion of the wiring material is embedded to directly have contact with a lower layer wiring (105), and the surface whereupon the capacitor insulating film is to be formed is formed in a flat shape.