发明名称 THIN FILM DEPOSITION SYSTEM AND THIN FILM DEPOSITION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To homogeneously deposit thin films on the inner walls of fine voids such as passages of microreacters and capillaries. <P>SOLUTION: An electrode 62 and an electrode 63 are arranged at the outside of passages 12, 21 along the longitudinal direction of the passages 12, 21, a power source 61 is driven, and voltage is applied to gas in the passages 12, 21. Further, a power source control part 64 controls the power waveform of the power source 61, and every time gaseous starting materials are filled into the passages 12, 21, voltage is applied to the gaseous starting materials in the passages 12, 21 so as to generate plasma in the passages 12, 21. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006002230(A) 申请公布日期 2006.01.05
申请号 JP20040181559 申请日期 2004.06.18
申请人 RIKOGAKU SHINKOKAI 发明人 SUZUKI MASAAKI;KADOWAKI SEIKI;MORI SHINSUKE;YAMAMOTO TAKA;YOSHIZAWA HISASHI
分类号 C23C16/50;H05H1/46 主分类号 C23C16/50
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