发明名称 SUBSTRATE FOR WIRING CIRCUIT FORMATION, WIRING CIRCUIT SUBSTRATE AND METHOD OF FORMING METAL THIN LAYER
摘要 PROBLEM TO BE SOLVED: To provide a substrate for wiring circuit formation capable of improving the adhesiveness between an insulating layer and a conductive pattern and preventing delamination in metal thin layer, and to provide a wiring circuit substrate for which the substrate is employed and a method of forming a metal thin layer for forming the metal thin layer. SOLUTION: A first metal 35 and a second metal 36 are sputtered so that a first metal scattering region 37 where the first metal 35 scatters and a second metal scattering region 38 where the second metal 36 scatters may be overlapped, thereby forming a metal thin layer 2 on a base insulating layer 1. The metal thin layer 2 is thus formed so that a first metal maldistribution portion 4 having the first metal 35 unevenly distributed and adjacent to the base insulating layer 1, a second metal maldistribution portion 5 having the first metal 36 unevenly distributed and adjacent to a conductive pattern 6, and a metal coexisting portion 3 provided between the portions 4 and 5 and having the first and second metals 35 and 36 which coexist may continuously exist without the border. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006005176(A) 申请公布日期 2006.01.05
申请号 JP20040180245 申请日期 2004.06.17
申请人 NITTO DENKO CORP 发明人 NAITO TOSHIKI;YAMAZAKI HIROSHI
分类号 H05K1/09;C23C14/14;C23C14/16;C23C14/56;H01L21/44;H01L29/40;H05K3/10;H05K3/16;H05K3/38 主分类号 H05K1/09
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