| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor device which can accurately control the profile of impurities. SOLUTION: The method for manufacturing the semiconductor device comprises a step of implanting ion of an impurity element in a semiconductor region 1; a step of implanting the ions of the element having the same conductivity as group IV element or the impurity element, and of mass number larger than that of the impurity element as a predetermined element in the semiconductor region; a step of forming a crystal defect region 5 of an amorphous state, a step of illuminating and annealing the region where the impurity element and the predetermined element are injected, with light of flash lamp, to recover a crystal defect of the crystal defect region of the amorphous state and activate the impurity element, wherein an annealing step, by illuminating the light of the flash lamp is performed in a preheated state of the semiconductor region at a temperature, capable of maintaining the amorphous state of the crystal defect region. COPYRIGHT: (C)2006,JPO&NCIPI
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