| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin semiconductor device which can prevent deterioration in the reliability by a heavy metal contamination in a sealing step with a resin, etc. SOLUTION: The semiconductor device has a semiconductor integrated circuit in an upper part; and a semiconductor substrate 1, formed in advance in an interior with a minute defective layer 2, is thinned from the rear surface of the substrate by 150μm or smaller in thickness, so that it may leave minute defective layer 2. COPYRIGHT: (C)2006,JPO&NCIPI
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