| 摘要 |
PROBLEM TO BE SOLVED: To obtain a field effect transistor which has the excellent surface flatness of a semiconductor layer on which electrodes are formed and excellent sheet resistance, and is also suitable for achieving higher performance and reduction in size. SOLUTION: A semiconductor layer 104 formed of non-doped Al<SB>0.2</SB>Ga<SB>0.8</SB>N in the thickness of about 40 nm is laminated on a semiconductor layer 103 (buffer layer) formed of a non-doped GaN crystal. This semiconductor layer 104 is formed of the semiconductor layers of two layers in the total of a sharp interface providing layer 1041 of the thickness of about 30 nm, and an electrode connecting surface providing layer 1042 of the thickness of about 10 nm. These layers are formed of the non-doped Al<SB>0.2</SB>Ga<SB>0.8</SB>N as explained above, and H<SB>2</SB>has been used as carrier gas for the crystal growth of the sharp interface providing layer 1041. Moreover, N<SB>2</SB>has also been used as the carrier gas for the crystal growth of the electrode connecting surface providing layer 1042. COPYRIGHT: (C)2006,JPO&NCIPI
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