| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device where fluctuations of reference potential in a reference memory cell system can be reduced. SOLUTION: The ferroelectric memory device comprises a reference potential generation circuit in a system which generates the reference potential by averaging the potential read from two ferroelectric capacitors CD00 and CD20 for reference memory cells storing high-level data and two ferroelectric capacitors CD10 and CD30 for reference memory cells storing low-level data, for example. COPYRIGHT: (C)2006,JPO&NCIPI
|
