发明名称 |
Semiconductor device substrate with embedded capacitor |
摘要 |
A method for forming a semiconductor device including a DRAM cell structure comprising a silicon on insulator (SOI) substrate with an embedded capacitor structure including providing a substrate comprising an overlying first electrically insulating layer; forming a first electrically conductive layer on the first electrically insulating layer to form a first electrode; forming a capacitor dielectric layer on the first electrode; forming a second electrically conductive layer on the capacitor dielectric layer to form a second electrode; forming a second electrically insulating layer on the second electrode; and, forming a monocrystalline silicon layer over the second electrode to form an SOI substrate comprising a first capacitor structure.
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申请公布号 |
US2006003522(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20040881372 |
申请日期 |
2004.06.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN CHUN-CHIEH;LEE WEN-CHIN |
分类号 |
H01L21/8234;H01L21/8242;H01L21/8244 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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