| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor substrate which can restrain warpage in a semiconductor substrate, in which an insulating film, such as an interlayer insulating film or the like having a tensile stress, is formed on the surface thereof, and to provide a manufacturing method of the semiconductor substrate. SOLUTION: The semiconductor substrate comprises a silicon wafer 10, a multi-layer wiring 12 embedded in an interlayer insulating film formed on the front surface of the silicon wafer 10, and a silicon nitride film 16b as an insulating film which is formed on the rear surface of the silicon wafer 10 and has a tensile stress. Stress is given to the silicon wafer 10 with the interlayer insulating film, to which the multi-layer wiring 12 is embedded, and is relaxed with the silicon nitride film 16b. Accordingly, warpage of the silicon wafer 10 is restrained. Thus, generation of defective absorption in the transfer system of semiconductor substrate can be prevented. COPYRIGHT: (C)2006,JPO&NCIPI
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