| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for production of a gallium arsenide crystal in which cleavage fracture in the crystal can be prevented from occurring in the gallium arsenide crystal even when boron oxide is filled in a crucible. SOLUTION: This production method comprises charging a presynthesized gallium arsenide material 4 and boron oxide 5 in a crucible 1, heating and melting the gallium arsenide material 4 in the crucible 1, and completing solidification of the melt of the material 4 in such a state that the amount of gallium in the melt is larger than that of arsenic to grow a carbon-added gallium arsenide crystal. COPYRIGHT: (C)2006,JPO&NCIPI
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