Plasma enhanced deposited, fully oxidized PSG film

摘要

A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to porduce a plasma enhanced deposited oxide film on a substrate having a Si-O-Si bond peak absorbance in the IR spectrum of at least 1092 cm^-1.