发明名称 |
Method of fabricating a semiconductor device with multiple gate oxide thicknesses |
摘要 |
The individual performance of various transistors is optimized by tailoring the thickness of the gate oxide layer to a particular operating voltage. Embodiments include forming transistors with different gate oxide thicknesses by initially depositing one or more gate oxide layers with intermediate etching to remove the deposited oxide from active regions wherein transistors with relatively thinner gate oxides are to be formed, and then implementing one or more thermal oxidation steps. Embodiments include forming semiconductor devices comprising transistors with two different gate oxide thicknesses by initially depositing an oxide film, selectively removing the deposited oxide film from active areas in which low voltage transistors having a relatively thin gate oxide are to be formed, and then implementing thermal oxidation.
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申请公布号 |
US2006003511(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20040880527 |
申请日期 |
2004.07.01 |
申请人 |
LINEAR TECHNOLOGY CORPORATION |
发明人 |
HEBERT FRANCOIS;AHSAN SALMAN |
分类号 |
H01L21/8238;H01L21/336;H01L21/8234 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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