发明名称 |
Method and apparatus for photomask plasma etching |
摘要 |
A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.
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申请公布号 |
US2006000802(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20040882084 |
申请日期 |
2004.06.30 |
申请人 |
KUMAR AJAY;CHANDRACHOOD MADHAVI;ANDERSON SCOTT A;SATITPUNWAYCHA PETER;YAU WAI F |
发明人 |
KUMAR AJAY;CHANDRACHOOD MADHAVI;ANDERSON SCOTT A.;SATITPUNWAYCHA PETER;YAU WAI F. |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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