发明名称 High current charge pump for intelligent power switch drive
摘要 A current limiting driver circuit for a semiconductor power switch and a switching device including same. The driver circuit includes a sensing circuit for providing a signal representing the current flowing through the semiconductor power switch, a driver circuit for the power switch, a driver circuit for the sensing circuit. and a comparator circuit having a first input provided by an output of the sensing circuit, a second input provided by a reference signal, and an output provided as a signal input for the first and second driver circuits. A first charge pump provides the supply voltage for the driver circuits, and a second charge pump provides the supply voltage for the comparator, which is higher than the supply voltage for the power switch and the sensing circuit, so that the first and second driver circuits limit the current through the power switch and the sensing circuit even when the output of the sensing circuit approaches the value of the reference signal.
申请公布号 US2006001457(A1) 申请公布日期 2006.01.05
申请号 US20050130881 申请日期 2005.05.17
申请人 THEVENET KEVIN M 发明人 THEVENET KEVIN M.
分类号 H03B1/00;H03K17/06;H03K17/082;H05K1/11;H05K1/16 主分类号 H03B1/00
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