SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

There is provided a semiconductor device capable of improving the problem of the CMOS transistor threshold value control in the technique of combination of a high dielectric gate insulation film and a metal gate electrode and significantly improving the element characteristic without lowering the element reliability. The semiconductor device includes a gate insulation film using a high dielectric material and a gate electrode having a composition at the side in contact with the gate insulation film mainly containing silicide of metal M expressed by MxSil - x(0 < x < 1), wherein the silicide of the metal M is x > 0.5 in the case of P type MOSFET and the silicide of the metal M is x = 0.5 in the case of N type MOSFET.