| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces leakage current, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device includes a semiconductor substrate 1 including a first conductivity type. A pair of source/drain regions 4, having a second conductivity type, are formed on the front surface of the semiconductor substrate. A gate insulating film 3 is disposed on a channel region mutually between the source/drain regions. A gate electrode 5 having the first conductivity type is disposed on the gate insulating film. A gate electrode includes a first portion 5a, positioned above the channel region and a second portion 5b positioned above the source/drain regions. The majority carrier concentration of the second portion is lower than the majority carrier concentration of the first portion. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
