| 摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection circuit capable of realizing high ESD immunity without causing increase in the area and the cost. SOLUTION: The ESD protection circuit 1 connected between a terminal 20 and a ground terminal 30 includes three stages of transistors 11 to 13 of Darlington connection, a resistor 14 connected between the base of the transistor 13 and the ground terminal 30 to enhance the withstanding voltage of the transistor 13, and diodes 15 to 17 connected between the terminal 20 and the base of the transistor 11 for the purpose of adjusting a conduction start voltage of the transistor 13. When a high level ESD is applied to the terminal 20, the transistors 11 to 13 of Darlington connection are rapidly conductive, and the transistor 13 extracts electric charges at the terminal 20 toward the ground terminal 30 in a way of a large current. COPYRIGHT: (C)2006,JPO&NCIPI
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