| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can prevent generation of pin holes penetrating a protection film to reach the semiconductor substrate, and to provide its manufacturing method. SOLUTION: A post electrode 2 is formed on a semiconductor substrate 1 wherein an integrated circuit is formed. Next, a resin 3, containing a filler of the maximum particle size of 10μm or smaller, is applied over the post electrode 2 and the surface of the semiconductor substrate 1. Then, the surface of the resin 3 is polished by mechanical grinding of a back grinding device or the like, to expose the top of the post electrode 2 therefrom. The resin 3 is etched by chemicals, such as H<SB>2</SB>SO<SB>4</SB>or the like, to expose the sidewall of the post electrode 2, and plating 4 is stuck to the exposed part. COPYRIGHT: (C)2006,JPO&NCIPI
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