发明名称 Plasma processing method and apparatus
摘要 A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
申请公布号 US2006000803(A1) 申请公布日期 2006.01.05
申请号 US20050137673 申请日期 2005.05.26
申请人 KOSHIISHI AKIRA;HIROSE JUN;OGASAWARA MASAHIRO;HIRANO TAICHI;SASAKI HIROMITSU;YOSHIDA TETSUO;SAITO MICHISHIGE;ISHIHARA HIROYUKI;OOYABU JUN;NUMATA KOHJI 发明人 KOSHIISHI AKIRA;HIROSE JUN;OGASAWARA MASAHIRO;HIRANO TAICHI;SASAKI HIROMITSU;YOSHIDA TETSUO;SAITO MICHISHIGE;ISHIHARA HIROYUKI;OOYABU JUN;NUMATA KOHJI
分类号 C23F1/00;H05H1/46;B08B7/00;C23F4/00;H01J37/32;H01L21/304;H01L21/3065 主分类号 C23F1/00
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