| 摘要 |
PROBLEM TO BE SOLVED: To control the crack of an insulating substrate of a semiconductor device, and the embrittlement of solder. SOLUTION: The semiconductor device 1 is a semiconductor power module provided with: a metal base 2 formed into a shape of a rectangle; an insulating substrate 3 formed into a shape of a rectangle whose area is smaller than that of the metal base 2 arranged on the first principal surface of the metal base 2; a lower electrode 4 pasted to the insulating substrate 3 on the second principal surface of the insulating substrate 3; a Pb free solder film 5 wherein resin particles are mixed after pasting the lower electrode 4 and the metal base 2; an upper electrode 7 provided on the first principal surface of the insulating substrate 3; semiconductor devices 6a and 6b provided on the first principal surface of the upper electrode 7; and a bonding wire 9 which connects electrically the upper electrode 7 with the semiconductor devices 6a and 6b. COPYRIGHT: (C)2006,JPO&NCIPI |
