发明名称 High speed memory modules utilizing on-trace capacitors
摘要 Apparatus and method for producing memory modules having a plurality of dynamic random access memory (DRAM) devices or synchronous random access memory (SDRAM) devices connected to a memory bus, each DRAM or SDRAM device connected to the memory bus via a transmission signal (TS) line. The memory bus includes at least one TS line having a capacitor connected to the TS line in parallel to the plurality of DRAM or SDRAM devices, the TS line connected to the memory bus between a signal insertion end and an attachment point of a TS line of a first DRAM or SDRAM device. A computing system implementing the memory modules is also discussed.
申请公布号 US2006002165(A1) 申请公布日期 2006.01.05
申请号 US20040882459 申请日期 2004.06.30
申请人 CHANG GE;FAHMY HANY M 发明人 CHANG GE;FAHMY HANY M.
分类号 G11C5/06;G06F13/40 主分类号 G11C5/06
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