发明名称 Method of making iron silicide and method of making photoelectric transducer
摘要 A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.
申请公布号 US2006003585(A1) 申请公布日期 2006.01.05
申请号 US20050206999 申请日期 2005.08.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MOROOKA HISAO;YAMADA HIROSHI;NISHI KAZUO
分类号 H01L21/44;H01L31/04;C23C16/42;C23C16/505;H01L21/285 主分类号 H01L21/44
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