| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a heterojunction field effect transistor for use in an oscillator and power amplifier operating at a region from a microwave to a millimeter wave and, more particularly, a method of manufacturing a heterojunction field effect transistor having a high element breakdown voltage and small series resistance during operation. SOLUTION: In the heterojunction field effect transistor having a gate recess structure, empty regions give much effect on an element breakdown voltage of the heterojunction field effect transistor between from an end of a gate electrode to an end of a source or drain electrode, are composed of at least two layers having different impurity concentrations, thereby reducing series resistance of the heterojunction field effect transistor and enabling the heterojunction field effect transistor to realize a high element breakdown voltage. COPYRIGHT: (C)2006,JPO&NCIPI
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