| 摘要 |
PROBLEM TO BE SOLVED: To reduce the amount of metal contamination after the startup and maintenance of a device without being influenced by an environment and cleaning components. SOLUTION: While gas containing at least a nitrogen gas (N<SB>2</SB>) is supplied to and exhausted from a treatment chamber without mounting a wafer on a susceptor provided in the treatment chamber, plasma dummy discharge is performed. In this plasma dummy discharge, the plasma dummy discharge is preferably repeated in order to reduce the amount of metal contamination. Moreover, pressure in the plasma discharge is preferably lowered than pressure in plasma oxidation or plasma nitridation by mounting the wafer, and high-frequency power in the plasma discharge is preferably increased than high-frequency power in the plasma oxidation or the plasma nitridation. After the plasma dummy discharge is repeated, it is transitted to production processes. Then, the wafer is mounted on the susceptor to treat the wafer through the plasma oxidation or the plasma nitridation of the wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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