| 摘要 |
PROBLEM TO BE SOLVED: To protect a ferroelectric capacitor from hydrogen contained in a lower layer thereof. SOLUTION: A method of manufacturing a semiconductor device comprises steps of: forming a first hydrogen barrier film 10 and an interlayer 11 on an interlayer insulating film 8; forming a ferroelectric capacitor 13 on the interlayer 11; forming a second hydrogen barrier film 14 on the whole surfaces including the top face and the side face of the ferroelectric capacitor 13 and the top face of the interlayer 11; eliminating the second hydrogen barrier film 14 and the interlayer 11 by leaving at least portions which are located on the top face and the side face of the ferroelectric capacitor 13; and forming third hydrogen barrier films 15 on the second hydrogen barrier film 14, the respective side faces of the second hydrogen barrier film 14 and the interlayer 11 and the first hydrogen barrier film 10. COPYRIGHT: (C)2006,JPO&NCIPI
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