| 摘要 |
The SOI substrate 1 has a supporting substrate 10 , an insulating layer 20 formed on the supporting substrate 10 and a silicon layer 30 formed on the insulating layer 20 . A through electrode 40 is provided in a device formation region A 1 of the SOI substrate 1 . The through electrode 40 reaches the insulating layer 20 from the silicon layer 30 . Specifically, the through electrode 40 extends to an inner part of the insulating layer 20 originating from a surface of the silicon layer 30 while penetrating the silicon layer 30 . Here, an end face 40 a of the through electrode 40 at the insulating layer 20 side stops inside the insulating layer 20.
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