发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER WITH LID AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer with a lid which allows a reduction in size and an increase in manufacturing efficiency and yield of a semiconductor apparatus, and also to provide a method of manufacturing the semiconductor apparatus. <P>SOLUTION: The method of manufacturing the semiconductor wafer with a lid comprises an adhesive layer formation process (S1) wherein an adhesive layer containing an optically hardening adhesive and a thermosetting adhesive is formed on a semiconductor wafer formed with a plurality of semiconductor devices; exposure process (S2) wherein the adhesive layer is selectively exposed to harden the optically hardening adhesive contained in the adhesive layer on the peripheral edge of each semiconductor device, adhering the adhesive layer and each semiconductor device; development process (S4) wherein the optically hardening adhesive is developed to remove the adhesive layer in an unexposed region; testing process (S5) of determining whether a patterning profile of the adhesive layer is acceptable or not for each semiconductor device; and lid adhering process (S6) wherein a lid is arranged in the adhesive layer of each semiconductor device, and then the adhesive layer is heated to make the thermosetting adhesive contained in the adhesive layer exhibit its adhesiveness to adhere the adhesive layer and the lid. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006005025(A) 申请公布日期 2006.01.05
申请号 JP20040177529 申请日期 2004.06.15
申请人 SHARP CORP 发明人 HOSHIKA MASATO
分类号 H01L23/02;H01L21/301;H01L21/48;H01L23/10;H01L27/14;H01L31/02;H01L31/0203;H01L31/0232 主分类号 H01L23/02
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