| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser element, which can easily enhance an etching accuracy and can reduce variations in properties. SOLUTION: A laminate 26 comprises at least an n-type cladding layer 14, an active layer 15, a p-type first cladding layer 16, a p-type etching stopper layer 17, a p-type second cladding layer 18, a p-type intermediate layer 19, and a p-type capping layer 20. The laminate 26 is dry-etched by using an etching gas including an iodine-based gas to form a ridge portion 21. Since this method can easily enhance the accuracy of dry etching for forming the ridge portion 21 without strictly controlling the temperature in a chamber, variations in properties of semiconductor laser elements can be reduced. In addition, since the temperature in the chamber during dry etching can be set to a low temperature, an etching mask 28 can be made of a resist to simplify the etching mask production process, thereby enhancing productivity. COPYRIGHT: (C)2006,JPO&NCIPI
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