SEMICONDUCTOR OPTICAL ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor optical element wherein carriers can be confined effectively in its active layer and the number of the epitaxial growth processes of semiconductors can be reduced. SOLUTION: The semiconductor optical element 1 has a first conductivity type semiconductor region 3, an active layer 5, and a second conductivity type semiconductor region 7. The first conductivity type semiconductor region 3 is provided on a first conductivity type GaAs substrate 11. The second conductivity type semiconductor region 7 is provided on the first conductivity type semiconductor region 3. The active layer 5 is provided between the first conductivity type region 3 and the second conductivity type semiconductor region 7. The first conductivity type semiconductor region 3 and the second conductivity type semiconductor region 7 constitute a pn-junction mutually in the periphery of the active layer 5. COPYRIGHT: (C)2006,JPO&NCIPI