| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that photoelectric conversion efficiency is deteriorated by thickness variation of anti reflective coating on a light receiving element, in an optical semiconductor device wherein an integrated circuit, the light receiving element and a micro mirror are mounted on the same substrate. SOLUTION: In the optical semiconductor device; a transistor 2, the light receiving element 3, and the micro mirror 5 which constitute the integrated circuit are mounted on the same semiconductor substrate 1. The optical semiconductor device is provided with the anti reflective coating 16 formed on the light receiving element 3, a first insulating film 18 which is formed on the anti reflective coating 16 and opened in the state in which the anti reflective coating 16 is exposed, and an etching stop film 19 which is formed on the first insulating film 18 and left on the periphery of the aperture of the first insulating film 18 on the anti reflective coating 16 and the periphery on the micro mirror 5. By the above constitution, the anti reflective coating 16 which was controlled by desired thickness is formed on the light receiving element 3, so that high sensitivity of the light receiving element 3 is attained. COPYRIGHT: (C)2006,JPO&NCIPI
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