发明名称 Fixed-abrasive chemical-mechanical planarization of titanium nitride
摘要 Titanium nitride layers planarized may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits. Planarizing solutions may be used for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents.
申请公布号 US2006003675(A1) 申请公布日期 2006.01.05
申请号 US20050215711 申请日期 2005.08.30
申请人 发明人 CHOPRA DINESH;SABDE GUNDU
分类号 B24B1/00 主分类号 B24B1/00
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