| 发明名称 |
Two transistor gain cell, method, and system |
| 摘要 |
A two transistor memory cell includes a write transistor and a read transistor. When reading the memory cell, the read transistor is turned on, and a voltage develops on a read bit line.
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| 申请公布号 |
US2006002211(A1) |
申请公布日期 |
2006.01.05 |
| 申请号 |
US20040881001 |
申请日期 |
2004.06.30 |
| 申请人 |
YE YIBIN;SOMASEKHAR DINESH;KHELLAH MUHAMMAD M;PAILLET FABRICE;TANG STEPHEN H;KESHAVARZI ALI;LU SHIH-LIEN L;DE VIVEK K |
发明人 |
YE YIBIN;SOMASEKHAR DINESH;KHELLAH MUHAMMAD M.;PAILLET FABRICE;TANG STEPHEN H.;KESHAVARZI ALI;LU SHIH-LIEN L.;DE VIVEK K. |
| 分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
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