| 摘要 |
In a split gate type flash memory device, and a method of manufacturing the same, the device includes a memory cell array having a memory cell uniquely determined by a contact of a corresponding bit line and a corresponding word line, a floating gate formed on a semiconductor substrate to constitute the memory cell, the floating gate having a horizontal surface parallel to a main surface of the substrate, a vertical surface perpendicular to the main surface of the substrate, and a curved surface extending between the horizontal and vertical surfaces, a control gate formed over the curved surface of the floating gate in an area defined by an angle range of less than 90° between an extension line of the horizontal surface and an extension line of the vertical surface, and source and drain regions formed in an active region of the substrate.
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