| 摘要 |
Disclosed are a phase-change random access memory device and a method for manufacturing the same, capable of improving a driving speed of the phase-change random access memory by reducing a contact surface between a bottom electrode and a phase-change layer. The phase-change random access memory device includes a first insulation layer formed on a semiconductor substrate and having a first contact hole for exposing a predetermined portion of the semiconductor substrate, a bottom electrode contact for filling the first contact hole, a first bottom electrode formed on the first insulation layer, a second bottom electrode spaced from the first bottom electrode by a predetermined distance, a second insulation layer formed on the first insulation layer, a phase-change layer pattern for filling the second contact hole, and a top electrode formed on the phase-change layer pattern.
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