发明名称 |
Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device |
摘要 |
In an embodiment, a method of forming a gate structure for a semiconductor device includes forming a preliminary gate structure on a semiconductor substrate. The preliminary gate structure includes a gate oxide pattern and a conductive pattern sequentially stacked on the substrate. Then, a re-oxidation process is performed to the substrate having the preliminary gate structure using an oxygen radical including at least one oxygen atom, so that an oxide layer is formed on a surface of the substrate and sidewalls of the preliminary gate structure to form the gate structure for a semiconductor device. The thickness of the gate oxide pattern is prevented from increasing, and the quality of the oxide layer is improved.
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申请公布号 |
US2006003509(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20050175569 |
申请日期 |
2005.07.05 |
申请人 |
LEE WOONG;YOU YOUNG-SUB;LEAM HUN-HYEOUNG;HYUNG YONG-WOO;LEE JAI-DONG;NA KI-SU;KIM JUNG-HWAN |
发明人 |
LEE WOONG;YOU YOUNG-SUB;LEAM HUN-HYEOUNG;HYUNG YONG-WOO;LEE JAI-DONG;NA KI-SU;KIM JUNG-HWAN |
分类号 |
H01L21/76;H01L21/336;H01L21/8234 |
主分类号 |
H01L21/76 |
代理机构 |
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