| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a sputtering target for producing a transparent electrically conductive thin film where the strength of a sputtering target can be improved, the cracking of the sputtering target is not caused, and the sputtering target of high density can be produced. <P>SOLUTION: The powder of indium oxide having a specific surface area of 1 to 20 m<SP>2</SP>/g is mixed with at least one kind of metal powder or oxide powder selected from the group consisting of silicon (Si), titanium (Ti), zinc (Zn), gallium (Ga), germanium (Ge), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tin (Sn) and tungsten (W), and, using the obtained powdery mixture, hot pressing is performed. The specific surface area of the indium oxide powder is preferably ≤15 m<SP>2</SP>/g, more preferably ≤6 m<SP>2</SP>/g. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
