| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a silicon wafer of high quality can be manufactured, where a COP free region and an oxygen deposition free region are sufficiently secured, a haze and foreign matters are not burnt on a wafer surface, and a contact mark with a jig does not exist on a wafer rear face. <P>SOLUTION: In the method, the silicon wafer is manufactured from silicon single crystal. The manufacturing method of the silicon wafer performs a double-side polishing process for mirror-finishing both faces of the wafer, an annealing process for annealing the wafer which is mirror-finished, and a re-polishing process for re-polishing the surface or both faces of the annealed wafer on the wafer which is cut from silicon single crystal. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
