| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-density detecting method for impurities in processing liquid which produces microroughness on a silicon substrate surface. <P>SOLUTION: After microroughness is generated on the silicon substrate surface by carrying out processing using chemical liquid or pure water for a given time, the state of the microroughness of the silicon substrate is measured by a total-reflection infrared absorptivity method. An absorption peak prescribed by a specified absorption wave number in the obtained absorption spectrum is determined as a reference peak, and an absorption peak prescribed by another specified absorption wave number is determined as a contrast peak. The peak intensity ratio of the reference peak and contrast peak is found to detect the microroughness generation state of the silicon substrate surface and enable quantitative evaluation through numeralization. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
