| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can increase an electrostatic destruction resistance, and a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device has a gate electrode, a drain region, and a source region. The drain region has the first impurity diffusion zone 18a of a first conductivity type formed on the first side of the gate electrode, the second impurity diffusion zone 20a of the first conductivity type formed deeper than the first impurity diffusion zone, the third impurity diffusion zones 28a, 28b of the first conductivity type formed shallower than the first impurity diffusion zone and having an impurity concentration higher than that of an impurity diffusion layer, and silicide films 32a, 32b formed on the third impurity diffusion zones and connected to a drain contact 22D. A zone having no silicide film between the drain contact and a sidewall insulating film is present, and the second impurity diffusion zone is not formed within a semiconductor substrate below the drain contact. COPYRIGHT: (C)2006,JPO&NCIPI
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