| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the practicability of a semiconductor device effectively reducing the dielectric constant of an interlayer insulating film containing a porous insulating film and having a fine damascene wiring having a high reliability. SOLUTION: The first interlayer insulating film 2 containing a first porous low dielectric-constant film 2b is formed on a lower-layer wiring 1, and a first barrier layer 5 and a via plug 6 are formed in via holes 3 formed to the first interlayer insulating film 2 through first side-wall protective films 4 formed on the side walls of the via holes 3. Likewise, a second barrier layer 10 and an upperlayer wiring 11 are formed in the trenches 8 of the second inter-layer insulating films 7 containing second porous low dielectric-constant films 7b through second sidewall protective films 9 formed on the side walls of the trenches 8. Here, the first sidewall protective films 4 and the second sidewall protective films 9 are composed of the porous low dielectric-constant films, have the content of 30% or less of the holes and have the size of 2 nm or less of the holes. COPYRIGHT: (C)2006,JPO&NCIPI
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