| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leakage current even in either high electric field of both a positive electrode and a negative electrode, and to inhibit the leakage current in a wide electric-field range from a low electric field to a high electric field difficult in a single high dielectric film. SOLUTION: A nonvolatile semiconductor memory comprises a floating gate electrode 12 selectively formed on the main surface of a first conductivity type semiconductor substrate 10 through a tunnel insulating film 11, and a control gate electrode 14 formed on the floating gate electrode 12 through an inter-electrode insulating film 13. The nonvolatile semiconductor memory further has second conductivity type source-drain regions 15 formed on the main surface of the substrate in response to each gate electrode 12 and 14. In the nonvolatile semiconductor memory, the inter-electrode insulating film 13 has three layers or more of a laminated structure composed of two kinds or more of high dielectric materials 13a, 13b and 13c. COPYRIGHT: (C)2006,JPO&NCIPI
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