| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is canceled in both B-mode failure and the malfunction caused by unformed silicide. SOLUTION: The semiconductor device is composed of a substrate having first and second element regions formed by an element isolating region, a first field effect transistor formed in the first element region and having a first polysilicon gate electrode, and a second field effect transistor formed in the second element region and having a second polysilicon gate electrode. The device is also composed of a polysilicon pattern which is extended on the element isolating region to connect the first and second polysilicon gate electrodes to each other, and a silicide layer which is formed on the surfaces of the first and second polysilicon gate electrodes and the polysilicon pattern and extended on the polysilicon pattern from the first polysilicon gate electrode to the second polysilicon gate electrode. The silicide layer contains a thick portion which is increased in thickness on the polysilicon pattern. In the thick portion, the surface of the silicide layer is protruded upward. COPYRIGHT: (C)2006,JPO&NCIPI
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